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62 mm 1700 V, 150 A dual IGBT module with TRENCHSTOP™ IGBT4 and Emitter Controlled Diode.

特征描述

• Extended Operation Temperature T_{vj op}
• Low V_CEsat
• Unbeatabel Robustness
• V _CEsat with positive Temperature Coefficient
• Isolated Base Plate; Standard Housing
• 4 kV AC 1 min Insulation
• Package with CTI > 400
• High Creepage and Clearance Distances

优势

• Flexibility
• Optimal electrical performance
• Highest reliability