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IHV-B 3300 V, 1200 A 190 mm single switch IGBT Module with TRENCHSTOP™ IGBT3 and Emitter controlled 3 Diode. Also available in IHV-A package: FZ1200R33KF2C

特征描述

• High DC stability
• High short circuit capability
• Self limiting short circuit current
• Low switching losses
• Unbeatable robustness
• T_{vj op} = 150°C
• Low V_CEsat with positive temperature coefficient
• AlSiC base plate for increased thermal cycling capability
• Package with CTI > 600
• Isolated base plate

优势

• Standardized housing