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IHV 4500V, 1200 A 190 mm single switch IGBT Module with TRENCHSTOP™ IGBT3, Emitter Controlled 3 diode and isolated AlSiC Base Plate.

特征描述

• High DC stability
• High short circuit capability, self limiting short circuit current
• High dynamic robustness
• Low V_CEsat with positive temperature coefficient
• 10.2 kV AC Isolation
• High creepage and clearance distances

优势

• High power density for compact inverter designs
• Standardized housing