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IHV 4500 V, 1200 A 130 mm Diode Module with EC3 - Diode, predestined to be combined with IGBT products (e.g. FZ1200R45KL3_B5 or FZ800R45KL3_B5).
特征描述
- High DC Stability
- High Dynamic Robustness
- High surge current capability
- 10.2 kV AC Isolation
- AlSiC Base Plate for increased Thermal Cycling Capability
- Package with CTI > 600
- High Creepage and Clearance Distances
优势
- High power density for compact inverter designs
- Standardized housing
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