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IHV 4500 V, 1200 A 130 mm Diode Module with EC3 - Diode, predestined to be combined with IGBT products (e.g. FZ1200R45KL3_B5 or FZ800R45KL3_B5).

特征描述

• High DC Stability
• High Dynamic Robustness
• High surge current capability
• 10.2 kV AC Isolation
• AlSiC Base Plate for increased Thermal Cycling Capability
• Package with CTI > 600
• High Creepage and Clearance Distances

优势

• High power density for compact inverter designs
• Standardized housing