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IHV-B 3300 V, 3300 V, 825 A 130 mm single switch IGBT Module with TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode. The experienced solution for traction and industry applications.

特征描述

• High DC stability
• Best in class short circuit capability
• Low switching losses
• T_{vj op} = 150°C
• V_CEsat with positive temperature coefficient
• AlSiC base plate for increased thermal cycling capability
• Package with CTI > 600
• Isolated base plate
• Diode Power 30% higher than IGBT

优势

• Unbeatable robustness
• Standardized housing
• 2 times higher Power Cycling Capability than Infineon IGBT3 and any competition 3.3 kV IHV
• Easy replacement of FZ1000R33HE3 and FZ800R33KF2C and as well any competition 800 to 1000 A 3.3 kV devices possible on high performance and housing compatibility
• Bigger Diode enables e.g. increased braking Power at traction applications