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IHV-B 4500 V, 1800 A 190 mm single switch IGBT Module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and isolated AlSiC Base Plate - The best solution for your industry applications. 

The FZ1800R45HL4_S7 can be driven with V_GE=25 V instead of the usual 15 V

特征描述

• Extremely low Static Losses
• Highest Dynamic Robustness
• High DC Stability
• Low V_CEsat with positive Temperature Coefficient

优势

• Unbeatable Robustness
• First Module to enable >3.5 GW HVDC Plants at 525 kV
• 20% higher Power Density (compared to the Competition Flagship)
• Standardized Housing eases Design and Maintenance