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IHV-B 4500 V, 1800 A 190 mm single switch IGBT Module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and isolated AlSiC Base Plate - The best solution for your HVDC application. 

In comparison to the standard type the _S7 type can be driven with V_GE=25 V instead of the usual 15 V

特征描述

• Lowest static losses
• Highest dynamic robustness
• High short circuit capability, self-limiting short circuit current
• Low V_CEsat with positive temperature coefficient
• Gate emitter voltage of 25 V

优势

• Unbeatable robustness
• First module to enable 1.4 GW HVDC Plants at 320 kV w/o paralleling
• 10% lower energy loss penalties possible (compared to the next best alternative)
• Standardized housing eases design and maintenance