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SKiM459GD12F4V3 Features

• IGBT 4 Fast
• SiC Schottky free-wheeling diodes, 3 diodes per switch
• Solderless sinter technology
• V_CE(sat) with positive temperature coefficient
• Low inductance case
• Insulated by Al₂O₃ DBC (Direct Bonded Copper) ceramic substrate
• Pressure contact technology for thermal contacts
• Spring contact system to attach driver PCB to the control terminals
• High short circuit capability
• Integrated temperature sensor
• UL recognized: File no. E63532

SKiM459GD12F4V3 Target Applications

• UPS (inv., rect.)
• Energy storage
• Active front-end