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SKM100GB125DN Features

• N channel, homogeneous Si
• Low inductance case
• Short tail current with low temperature dependence
• High short circuit capability, self limiting to 6 x I_cnom
• Fast & soft inverse CAL diodes
• Isolated copper baseplate using DCB Direct Copper Bonding Technology
• Large clearance (10 mm) and creepage distances (20 mm)

SKM100GB125DN Target Applications

• Switched mode power supplies at f_sw > 20 kHz
• Resonant inverters up to 100 kHz
• Inductive heating
• Electronic welders at f_sw > 20 kHz